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詳細(xì)介紹
技術(shù)參數(shù):
1. 元素分析范圍從鈉(Na)到鈾(U)
Measurable elements: Na-U
2.. 元素含量分析范圍為1ppm到99.99%
Element content: 1ppm-99.99%
3. 低檢出限：1ppm
Detection limit: 1ppm
3. 測量時間：60-200秒(可調(diào))
Measurement time: 60-200s (adjustable)
4. 儀器工作電源：AC220±5V
Power：AC220±5V
5. 能量分辨率為129±5eV
Energy resolution: 129±5 eV
6. X 射線光管大輸出電流：1mA
X-ray tube maximum output current: 1mA
7. 極限壓力：6.7×10-2 Pa
Ultimate pressure：6.7×10-2 Pa
8.樣品腔尺寸：610*320*100(mm)（不抽真空）/Φ100*h75(mm) (真空樣品腔)
Sample chamber size: 610*320*100(mm) (Without vacuum)/Φ100*h75(mm) (Vacuum)
9.多次測量重復(fù)性(以標(biāo)準(zhǔn)樣品為準(zhǔn))：±0.05%（高含量）/±0.002%(微量)
Long-time working stability(subject to standard sample):±0.05%(high content)
/±0.002%(micro-content)
10.長期工作穩(wěn)定性(以標(biāo)準(zhǔn)樣品為準(zhǔn))±:0.06% (高含量）/±0.0025%(微量)
Excellent repeatability(subject to standard sample):0.06%((high content)/±0.0025%(micro-content)
產(chǎn)品特點：
1. 采用的美國SDD（SILICON DRIFT DETECTOR）硅漂移探測器,分辨率更高, 大大提高了輕元素的檢出限，標(biāo)準(zhǔn)檢出限較SI-PIN探測器提高100倍；測量范圍更寬，基本涵蓋了各種常規(guī)材料元素分析要求；
The silicon draft detector imported from America with higher energy resolution largely improves the detection limit of light elements which is 100 times higher than that of Si-pin detector. Measurement scope is wider which can almost meet element analysis requirements of all conventional material.
2. 配置美國數(shù)據(jù)集成處理系統(tǒng),數(shù)據(jù)采集速度更快，測量更穩(wěn)定，重復(fù)性和長期穩(wěn)定性更好；
Data integration processing system imported from America makes data acquisition faster, measurement more stable with excellent repeatability and long-time stability.
3. 配置新開發(fā)的專用測量軟件,集成多種圖形計算方法,測量數(shù)據(jù)更精準(zhǔn)，更穩(wěn)定；
Up-to-date software integrating multiple image computering methods makes data measurement more accurate and stable.
4. 軟件全面監(jiān)控儀器主要核心部件運(yùn)行狀態(tài),使用更安全；
Software full monitors core parts running ensures safe operation.
5. 配置專門開發(fā)的真空系統(tǒng),真空性能更好,測試效果更佳；
Specialized vacuum system offers better vacuum performance and excellent testing results.
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