英國(guó)AML 邦定機(jī)AWB 04 & 08 Platform
AWB具有執(zhí)行對(duì)齊功能:
陽(yáng)極，共晶，直接(高溫和低溫)玻璃熔塊，粘合劑，焊料和熱壓晶片焊接。
新的“無(wú)粘合劑”臨時(shí)粘接
在一臺(tái)機(jī)器上對(duì)中和粘接
?In-situ 對(duì)齊 accuracy. 1 微米
?10-6mbar Vacuum 2 條 過程 ?特高壓選項(xiàng)
?Voltage 2.5 kV.
?Temperature 560 ° C.
?Forces 40 kN.
結(jié)合 周快
2 “ 8 ". ?Wafer 大小
In-situ UV cure.
自動(dòng)PC控制和數(shù)據(jù)采集
實(shí)時(shí)控制所有鍵參數(shù)或全自動(dòng)配方。所有的鍵合參數(shù)，如電流、電壓、集成電荷、溫度、室壓、力、晶圓分離、運(yùn)行參數(shù)、配方、SPC晶圓批號(hào)、事件日志等，都自動(dòng)存儲(chǔ)在文件中，用于圖形繪制和趨勢(shì)分析。機(jī)器也可以聯(lián)網(wǎng)，并由AML遠(yuǎn)程詢問，以幫助發(fā)現(xiàn)故障。全自動(dòng)配方，包括在生產(chǎn)環(huán)境中自動(dòng)對(duì)齊除霧操作。
對(duì)齊方式:
手動(dòng)和自動(dòng)對(duì)齊。原位對(duì)齊比其他焊接(在粘結(jié)室外進(jìn)行對(duì)齊)具有優(yōu)勢(shì)。'一鍵'對(duì)齊和鍵合?？梢姽夂图t外光譜。廣泛間隔的三維對(duì)齊標(biāo)記的圖像捕獲。
校準(zhǔn)可進(jìn)行熱或冷:
這消除了由于熱膨脹和晶圓片、機(jī)器部件和壓板之間的不匹配而導(dǎo)致的對(duì)準(zhǔn)誤差。
大晶片分離:
允許晶圓片之間存在較大的溫差，這是通過工藝氣體(如成形氣體)更好地活化或原位氧化還原晶圓片的理想選擇。也允許快速，高真空和良好定義的焊接環(huán)境。
現(xiàn)場(chǎng)系統(tǒng):
還可以在粘接過程之前直觀地確認(rèn)所需的對(duì)齊仍在進(jìn)行中。
晶片尺寸:
2 "， 3"， 4"， 5 "， 6 "和8 "。(芯片和形狀奇怪的基板，但沒有對(duì)齊)。
機(jī)械手:
使晶圓片在真空和高溫下能夠原位對(duì)準(zhǔn)。
接觸力:通過手動(dòng)或電動(dòng)液壓提供，可達(dá)40kN。
精密晶圓平行度調(diào)整。
1μm對(duì)準(zhǔn)精度。
光學(xué):
雙顯微鏡-通過鏡頭照明的照相機(jī)系統(tǒng)。兩個(gè)CCD相機(jī)并排顯示圖像。包括紅外功能。同時(shí)顯示晶圓片的分離力和鍵合力，實(shí)現(xiàn)對(duì)中控制。
成鍵
環(huán)境:
真空，或工藝氣體。全自動(dòng)干式渦輪泵送系統(tǒng)~ 1x10- 6mbar至2bar壓力。特高壓選項(xiàng)
溫度:
上下壓板均可獨(dú)立調(diào)節(jié)，在1°C的步驟。加熱和冷卻速度可編程。溫度是560℃。
電極(陽(yáng)極鍵合):
全尺寸加熱板，用于上下電極，以獲得更好的粘結(jié)均勻性。0-2.5千伏直流可達(dá)40毫安。恒流或恒壓運(yùn)行，改善過程控制和應(yīng)力管理。
AWB-04可以粘合3到6英寸的晶圓片和芯片
AWB-08可以粘合6英寸和8英寸的晶片
其他選項(xiàng):
?Auto alignment.
?Triple 堆棧 結(jié)合 tool.
?Powered lid.
?Pressure control.
?CMOS compatible.
?High 精度 系統(tǒng) 1 μm alignment.
低溫 激活 bonding. ?RAD 工具
?In-situ UV Cure.
?Motorised X, Y, ? & Z movement.
?Image capture.
?Process support.
AML - AWB 04 & 08 Platform
The AWB has the versatility to perform aligned:
Anodic, Eutectic, Direct (High & Low Temperature) Glass frit, Adhesive, Solder & Thermo-compression wafer bonding.
New 'Adhesive free' temporary Bonding
Alignment & bonding in one machine
?In-situ alignment 1 micron accuracy.
?10-6mbar Vacuum to 2bar process gas. UHV Option
?Voltage up to 2.5kV.
?Temperature up to 560° C.
?Forces up to 40kN.
?Market leading fast bonding cycle times / high throughput.
?Wafer sizes 2"- 8".
?In-situ UV cure.
Automatic PC Control & Data acquisition
Live control of all bond parameters or fully automated recipes. All the bonding parameters e.g. current, voltage, integrated charge, temperature, chamber pressure, force, wafer separation, run parameters, recipes, wafer batch No for SPC and event logs are automatically stored in files for graph plotting and trend analysis. Machines can also be networked and remotely interrogated by AML to aid fault finding. Fully automatic recipe, including auto alignment to deskill operation in a production environment.
Alignment:
Manual and auto alignment. In-situ alignment has advantages over other bonders (where alignment is made outside the bond chamber).‘One click’ align and bond. Visible and IR. Image capture for widely spaced 3D alignment marks.
Alignment can be carried out hot or cold:
This eliminates alignment inaccuracies due to thermal expansion & mismatch between wafers, machine parts & platens.
Large wafer separation:
Allows large temperature difference between wafers – ideal for better activation or in-situ oxide reduction via process gas e.g. forming gas. Also allows fast, high vacuum & well defined bonding environment.
In-situ system:
Also enables visual confirmation just before the bonding process that the desired alignment is still being achieved.
Wafer sizes:
2”, 3", 4", 5”, 6” & 8”. (Also chips & odd shaped substrates, but without alignment).
Manipulator:
Enables in-situ alignment of wafers under vacuum and at elevated temperature.
Contact force: up to 40kN provided via manual or motorised hydraulics.
Precise wafer parallelism adjustment.
Alignment accuracy 1 μm.
Optics:
Twin Microscope – camera system with throughthe-lens illumination. Two CCD cameras and side-by-side display of images. Including IR capability. Simultaneous display of wafer separation & bonding force for complete alignment control.
Bonding
Environment:
Vacuum, or process gas. Fully automated dry turbo pumping system ~ 1x10-6 mbar to 2bar absolute pressure. UHV option
Temperature:
Both Upper & Lower Platens independently adjustable in 1 °C steps. Heating & Cooling rates are programmable. Max Temperature is 560°C.
Electrodes:(for Anodic Bonding)
Full size heated platens for both upper andlower electrodes for better bond uniformity. 0-2.5 kV DC up to 40 mA. Constant current or voltage operation, for improved process control & stress management.
The AWB-04 can bond 3” to 6” wafers and chips
The AWB-08 can bond 6” and 8” wafers
Additional Options:
?Auto alignment.
?Triple stack bonding tool.
?Powered lid.
?Pressure control.
?CMOS compatible.
?High accuracy system for 1μm alignment.
?RAD tool for low temperature activated bonding.
?In-situ UV Cure.
?Motorised X, Y, ? & Z movement.
?Image capture.
?Process support.
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